Electret/High k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update
Electret/High k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update
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用于低压突触晶体管的驻极体/高 k 溶液电介质，具有近线性和双极重量更新
DOI：
10.1109/led.2022.3189758
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发表时间：
2022
影响因子：
4.9
通讯作者：
Junming Liu
中科院分区：
文献类型：
--
作者：
Cheng Chang;Yushan Li;Yan Zhang;Wentao Shuai;Haonan Liu;Ting Huang;Zhen Fan;Takeo Minari;Guofu Zhou;Ruiqiang Tao;Xubing Lu;Junming Liu
有机突触晶体管在类脑和生物相容性计算系统中受到高度赞赏，但在低电压下模仿线性和对称权重更新仍然具有挑战性。在这里，我们提出了一种自发地和简单地形成的浮栅结构，以解决这个问题，通过调节周围的电荷陷阱在旋涂，低温功能化（200 °C），和高- ${k}$（>10）氧化锆（ZrO x）陶瓷的离散小晶粒。基本的学习和记忆突触功能，具有出色的长期可塑性，接近线性和双极的权重更新协议，以及97.4%的最高图像识别准确率记录。该工作对构造低成本、高能效的神经网络具有重要意义。
Organic synaptic transistors are highly appreciated for brain-like and biocompatible computing systems, but remain challenging for mimicking linear and symmetric weight updates at low voltages. Here, we propose a spontaneously and simply formed floating gate structure to address this issue by regulating the charge traps around the discrete small grains in spin-coated, low temperature functionalized (200 °C), and high- ${k}$ (>10) zirconium oxide (ZrO x ) dielectrics. Basic learning and memory synaptic functionalities with excellent long-term plasticity, near linear and ambipolar weight update protocol, and the highest image recognition accuracy record of 97.4% are achieved. This work offers great significance in the fabrication of cost-effective and energy-efficient neuron network.