Selectively Self‐Assembled Single‐Walled Carbon Nanotubes Using Only Photolithography Without Additional Chemical Process
Selectively Self‐Assembled Single‐Walled Carbon Nanotubes Using Only Photolithography Without Additional Chemical Process
复制标题
仅使用光刻技术选择性自组装单壁碳纳米管，无需额外的化学过程
DOI：
10.1063/1.3666631
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Y. Byun
中科院分区：
文献类型：
--
作者：
Kyeong Heon Kim;Tae Geun Kim;Seok Lee;Y. Jhon;S. H. Kim;Y. Byun
在本文中，我们研究了一种在硅（Si）基板上选择性组装单壁碳纳米管（SWCNT）的新方法。这些单壁碳纳米管阵列仅使用光刻工艺制造。使用这种技术，单壁碳纳米管可以被吸收在硅衬底表面上，而不需要复杂的化学步骤。结果，我们成功地制造了基于 SWCNT 的多通道图案。难以管理的SWCNT可以很容易地被吸附在SiO 2 表面上。这比使用十八烷基三氯硅烷（OTS）的传统自组装工艺更进一步。该技术将为基于纳米结构的场发射晶体管（FET）器件的实现提供有用的基础。这种新工艺可用于制造 FET 器件的 SWCNT 通道。
In this paper, we investigated a novel method of selectively assembling single‐walled carbon nanotubes (SWCNTs) on a silicon (Si) substrate. These SWCNT arrays were fabricated by using only a photolithographic process. Using this technique, SWCNTs could be absorbed on the Si substrate surface without complicated chemical steps. As a result, we successfully fabricated SWCNT‐based multi‐channel patterns. The unmanageable SWCNTs could be easily absorbed on the Si02 surface. This is to advance one step further from the conventional self‐assembled process using octadecyltrichlorosilane (OTS). This technique will provide a useful basis for the implementation of nanostructure‐based field emission transistor (FET) devices. This new process can be used to fabricate SWCNT channels of FET devices.