Vertical Nanowire Array-Based Light Emitting Diodes
Vertical Nanowire Array-Based Light Emitting Diodes
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DOI：
10.1007/s12274-008-8017-4
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发表时间：
2008-08-01
期刊：
影响因子：
9.9
通讯作者：
Yang, Peidong
中科院分区：
文献类型：
--
作者：
Lai, Elaine;Kim, Woong;Yang, Peidong
报道了基于纳米线阵列的发光二极管的电致发光。该结由金属有机化学气相沉积（MOCVD）生长的p型GaN薄膜和通过简单的低温溶液方法从薄膜外延生长的垂直n型ZnO纳米线阵列组成。所制造的器件表现出类似二极管的电流-电压特性。电致发光在10 V的正向偏压下对人眼是可见的，并且光谱学揭示了发射由p-GaN薄膜中的受主到带跃迁主导。有人建议，垂直纳米线架构的设备导致波导发射从薄膜通过纳米线阵列。
Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.