Theory of charge-spin conversion at oxide interfaces: the inverse spin-galvanic effect
Theory of charge-spin conversion at oxide interfaces: the inverse spin-galvanic effect
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DOI：
10.1117/12.2319592
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发表时间：
2018-08
影响因子：
8.6
通讯作者：
G. Seibold;S. Caprara;R. Raimondi
中科院分区：
文献类型：
--
作者：
G. Seibold;S. Caprara;R. Raimondi
对于LaO/STO异质结中氧化物界面电子态的紧束缚模型，我们研究了外加电场引起的非平衡自旋极化。采用解析和数值相结合的方法，我们研究了在没有和存在局域无序的情况下，由于自旋-轨道耦合和反转不对称性的相互作用而导致的电子本征态的自旋织构如何决定作为化学势或带填充的函数的诱导自旋极化的符号。对于后者，我们发现诱导自旋极化从零温时的非单调行为演变为较高温度下的单调行为。我们的结果可能会为解释最近的实验提供一个合理的框架。
We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-binding model of electron states at oxides interfaces in LAO/STO heterostructures. By a combination of analytic and numerical approaches we investigate how the spin texture of the electron eigenstates due to the interplay of spin-orbit coupling and inversion asymmetry determines the sign of the induced spin polarization as a function of the chemical potential or band filling, both in the absence and presence of local disorder. With the latter, we find that the induced spin polarization evolves from a non monotonous behavior at zero temperature to a monotonous one at higher temperature. Our results may provide a sound framework for the interpretation of recent experiments.