Magnetron Sputtering of Aluminium Nitride Thin Films for Thermal Management
Magnetron Sputtering of Aluminium Nitride Thin Films for Thermal Management
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用于热管理的氮化铝薄膜磁控溅射
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
M. Djouadi
中科院分区：
文献类型：
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作者：
C. Duquenne;Bogdhan Popescu;P. Tessier;M. Besland;Y. Scudeller;C. Brylinski;S. Delage;M. Djouadi
采用磁控溅射技术，在室温下在硅衬底上合成了结晶良好的氮化铝薄膜。采用x射线衍射、扫描电镜、傅里叶变换红外光谱和拉曼光谱对膜的理化性质进行了研究。利用原始的电热技术对氮化铝薄膜的导热性能进行了表征。通过优化沉积参数和靶材制备，分离出了AlN（002）、（100）、（101）三种不同的六方晶向。结果表明，采用直流磁控溅射法制备的AlN薄膜导热系数在2 ~ 50 W·K−1·m−1之间。
Well-crystallized aluminium nitride (AlN) thin films were synthesized on silicon substrates at room temperature using magnetron sputtering. Physicochemical properties of the film were investigated using X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectrometry and Raman spectrometry. The thermal conductivity of the AlN films was characterized using an original electro-thermal technique. Thanks to an optimization of deposition parameters and target preparation, the different hexagonal crystalline orientations of AlN, i.e. (002), (100), (101) were isolated. It appears that AlN thin films deposited by DC magnetron sputtering exhibit a wide range of thermal conductivity, from 2 to 50 W · K−1 · m−1.