Growth of GaN Film on Graphene by HVPE
Growth of GaN Film on Graphene by HVPE
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DOI：
10.4028/www.scientific.net/amr.1061-1062.175
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发表时间：
2014-12
期刊：
影响因子：
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通讯作者：
Shunyu He;B. Cao;Qiang Yu;Lin Qi;Chinhua Wang;Yu Xu;Ji Cai Zhang;Qian Sun
中科院分区：
文献类型：
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作者：
Shunyu He;B. Cao;Qiang Yu;Lin Qi;Chinhua Wang;Yu Xu;Ji Cai Zhang;Qian Sun
报道了一种用氢化物气相外延(HVPE)法在石墨烯衬底上直接生长GaN薄膜的方法。我们用化学气相沉积(CVD)的方法在铜箔上生长了石墨烯，测试结果表明大部分区域都存在单层石墨烯。采用高压聚乙烯法在石墨烯/MO-GaN衬底(金属有机气相沉积生长的GaN)和MO-GaN模板上生长了GaN薄膜。采用拉曼光谱、扫描电子显微镜和X射线衍射仪对其进行了表征。与MO-GaN衬底相比，GaN薄膜的结晶质量都有所提高。然而，带有石墨烯中间层的HVPE-GaN的结晶质量略低于直接生长在MO-GaN上的晶体质量。
A method to grow gallium nitride (GaN) films directly on the graphene layers by hydride vapor phase epitaxy (HVPE) method is reported in this work. We used a chemical vapor deposition (CVD) method to grow graphene on a copper foil, and the test results showed the presence of monolayer graphene at most regions. GaN films were grown on the graphene/MO-GaN substrate (GaN which was grown by metal organic vapor phase deposition) and MO-GaN template by HVPE method. Raman Spectroscopy, Scanning Electron Microscopy (SEM), and X-Ray Diffraction (XRD) were adopted for characterization. By comparing with the MO-GaN substrate, the crystalline quality of the GaN films were both increased. However, the crystalline quality of the HVPE-GaN with graphene interlayer is slightly lower than that directly grown on MO-GaN.