Photoelectric conversion enhancement of Ag modified p-type Cu2O/n-type ZnO transparent heterojunction device
Photoelectric conversion enhancement of Ag modified p-type Cu2O/n-type ZnO transparent heterojunction device
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Ag修饰p型Cu2O/n型ZnO透明异质结器件的光电转换增强
DOI：
10.1007/s10854-018-0183-x
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Li Chaorong
中科院分区：
文献类型：
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作者：
Zhao Chuang;Pan Jiaqi;Wang Beibei;Dong Zongjun;Jiang Ziyuan;Wang Jingjing;Song Changsheng;Zheng Yingying;Li Chaorong
采用简单的磁控溅射方法制备了Ag修饰的Cu2O/ZnO p-n结透明薄膜。对器件的透过率和光电转换性能进行了研究，结果表明，与未修饰的异质结相比，器件的光电转换效率有了明显的提高(PCE为0.48%，提高了10倍)。通过分析认为，Cu2O/ZnO p-n结和AgO纳米粒子具有光电子给体和表面增强的等离子体吸收性能，是提高光电转换效率的主要原因。
The Ag modified transparent Cu2O/ZnO p–n junction films were prepared by a simple magnetron sputtering process. The transparence and photoelectric conversion of these devices were investigated, which exhibited an obvious photoelectric conversion enhancement (PCE of 0.48%, ten times) than those of the unmodified heterojunction. Through analysis, the enhancement of the photoelectric conversion could be attributed to the remarkable Cu2O/ZnO p–n junction and Ag0nanoparticles with the performances of photoelectron donor and surface enhanced plasmonic absorption.