G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems
复制标题
通过自适应神经模糊训练系统进行电路仿真的 G4-FET 建模
DOI：
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复制
发表时间：
2012
影响因子：
0.8
通讯作者：
B. Forouzandeh
中科院分区：
文献类型：
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作者：
H. Aghababa;B. Ebrahimi;Mehdi Saremi;V. Moalemi;B. Forouzandeh
G4-FET作为未来几代半导体工业的新兴器件引起了人们的关注。本文旨在提出一个代表G4 FET器件的特性，以执行电路模拟的模型。建模方法是建立在神经模糊技术，其主要优势是，他们是通用的逼近与征求解释的IF-THEN规则的能力。HSPICE电路仿真验证了该模型的准确性。
G4-FET has attracted attention as an emerging device for the future generations of semiconductor industry. This paper is intended to propose a model representing the characteristics of G4FET device in order to perform circuit simulations. The modeling approach is established upon the neuro-fuzzy technique whose main strength is that they are universal approximators with the ability to solicit interpretable IF-THEN rules. The accuracy of the proposed model is verified by HSPICE circuit simulations.