Controllable phase transition temperature by regulating interfacial strain of epitaxial VO2 films
Controllable phase transition temperature by regulating interfacial strain of epitaxial VO2 films
复制标题
通过调节外延VO2薄膜的界面应变来控制相变温度
DOI：
10.1016/j.ceramint.2020.01.290
复制
发表时间：
2020
影响因子：
5.2
通讯作者：
Xiong Rui
中科院分区：
文献类型：
--
作者：
Yu Ziyang;Liu Yong;Zhang Zhenhua;Cheng Ming;Zou Zhaorui;Lu Zhihong;Wang Dengjing;Shi Jing;Xiong Rui
通过界面应变调控氧化钒外延膜的金属-绝缘体转变过程是控制氧化钒外延膜性能、提高其器件应用范围的一种新方法。本工作制备了不同厚度的氧化钒薄膜，并研究了应变对转变温度的影响。氧化钒薄膜沿着其c轴方向存在压应变或拉应变，由于界面应变的影响，薄膜的相变温度在310-370 K范围内变化。沿轴向的拉伸应变沿着与转变温度的增加相关;然而，沿轴向的压缩应变沿着导致转变温度的降低。结果表明，氧化钒薄膜的金属-绝缘体转变过程可以通过界面应变来调控。这项工作表明，工程的相变外延钒氧化物薄膜或相关器件通过应变操纵的可行性，这可能是非常重要的实际应用。
Modulation of the vanadium oxide epitaxial film metal insulator transition process through interfacial strain is a novel approach for controlling the properties of epitaxial vanadium oxide films, improving its scope for device applications. In this work, vanadium oxide films of various thickness were prepared and the effects of strains on the transition temperature were investigated. The vanadium oxide films exhibited compressive or tensile interfacial strain along theirc-axis, the transition temperature varied in a range of 310–370 K owing to the effects of the interfacial strains. The tensile strain along thec-axis is correlated with an increase in transition temperature; however, the compressive strain along thec-axis leads to a decrease in transition temperature. The results show that the metal insulator transition process of vanadium oxide thin films can be regulated by interfacial strain. This work shows the feasibility of engineering the phase transition of epitaxial vanadium oxide films or the related devices through strain manipulating, which may be of great importance in practical applications.