Interface control and catalytic performances of Au-NiSx heterostructures
Interface control and catalytic performances of Au-NiSx heterostructures
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Au-NiS异质结构的界面控制和催化性能
DOI:
10.1016/j.cej.2019.122794
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发表时间:
2020
影响因子:
15.1
通讯作者:
Wang Rongming
中科院分区:
文献类型:
--
作者:
Lv Yuepeng;Duan Sibin;Zhu Yuchen;Guo Haizhong;Wang Rongming
Nickel sulfides (NiSx) as promising catalysts for hydrogen evolution reaction (HER) have attracted much interest. However, the HER catalytic activities of NiSxreported are relatively low for their poor electrical conductivity. The HER catalytic performance of NiSxis expected to be further enhanced by increasing their electronic conductivity. Constructing heterostructures consisting of noble metal and semiconductor has been proven to be an efficient method to promote their physicochemical performances benefitting from synergistic effects along the metal-semiconductor interface. Here, Au-NiSxheterostructures including core@shell, yolk-shell, and oligomer-like structures have been designed and synthesized by different solvothermal methods. A formation mechanism involving the Kirkendall effect has been proposed for the yolk-shell structure with an empty space around the Au core rather than the seeded grown core@shell structure. Catalytic performance measurements indicate that the Au@NiSxcore@shell nanoparticles (NPs) exhibit superior HER catalytic property to Au-NiSxyolk-shell, oligomer-like structures, and “pure” NiSxNPs, resulting from the electron transfer between Au and NiSxinterfaces. The overpotentials of Au-NiSxNPs with core@shell and yolk-shell nanostructures are 253 mV and 263 mV at 10 mA/cm2, respectively, which are lower than those of oligomer-like Au-NiSx(283 mV) and pure NiSx(321 mV) NPs. The Tafel slope of Au@NiSxcore@shell structure (43.7 mV/dec) is also the lowest. These results demonstrate that the core@shell NPs possess the best HER performances, followed by their yolk-shell and oligomer-like counterparts. These findings confirm that the physicochemical performances of the metal-semiconductor heterostructures can be efficiently optimized by adjusting the electron transfer through the interface structure control.