MR ratio enhancement by NOL current-confined-path structures in CPP spin valves
MR ratio enhancement by NOL current-confined-path structures in CPP spin valves
复制标题
CPP 自旋阀中 NOL 电流限制路径结构增强 MR 比
DOI：
10.1109/tmag.2004.829185
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发表时间：
2004
影响因子：
2.1
通讯作者：
M. Sahashi
中科院分区：
文献类型：
--
作者：
H. Fukuzawa;H. Yuasa;S. Hashimoto;K. Koi;H. Iwasaki;M. Takagishi;Y. Tanaka;M. Sahashi
比较了自然氧化（NO）和离子辅助氧化（IAO）制备的电流受限路径（CCP）电流垂直于平面巨磁电阻（CPP-GMR）自旋阀薄膜与纳米氧化层（NOL）的磁电阻（MR）性能。对于NO，在370 m/spl Omega//spl mu/m/sup 2/的RA下，MR比率仅为1.5%，而对于IAO，在500 m/spl Omega//spl mu/m/sup 2/的RA下，MR比率大大增加至5.4%。通过Valet-Fert模型拟合的数据显示IAO的MR增强效应较大，这是由CCP结构内Cu的金属纯度的改善来解释的。通过进一步提高Cu的金属纯度，在300 m/spl Ω/spl μ/m/sup 2/的小RA下，可以预期大于30%的大MR比。CCP-CPP自旋阀膜是实现用于200至400-Gbpsi记录的高密度记录头的有希望的候选者。
We have compared the magnetoresistance (MR) performance of current-confined-path (CCP) current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve films with a nano-oxide-layer (NOL), made between natural oxidation (NO) and ion-assisted oxidation (IAO). For the NO, an MR ratio was only 1.5% at an RA of 370 m/spl Omega//spl mu/m/sup 2/, whereas for the IAO, an MR ratio was greatly increased to 5.4% at an RA of 500 m/spl Omega//spl mu/m/sup 2/. Fitted data by the Valet-Fert model showing larger MR enhancement effect by the IAO is explained by the improvement of the metal-purity of the Cu inside the CCP structure. By further improvement of metal-purity of the Cu, a large MR ratio of more than 30% can be expected at a small RA of 300 m/spl Omega//spl mu/m/sup 2/. The CCP-CPP spin valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording.