Bulk and surface electronic structure of SnBi4Te7 topological insulator
Bulk and surface electronic structure of SnBi4Te7 topological insulator
复制标题
DOI：
10.1016/j.apsusc.2012.08.073
复制
发表时间：
2013-02
影响因子：
6.7
通讯作者：
M. Vergniory;T. Menshchikova;S. Eremeev;E. Chulkov
中科院分区：
文献类型：
--
作者：
M. Vergniory;T. Menshchikova;S. Eremeev;E. Chulkov
采用考虑自旋轨道耦合的密度泛函理论对SnBi_4Te_7三元化合物的体电子结构和表面电子结构进行了分析。结果表明，该材料是一种强拓扑绝缘体，体带隙约为100meV，在Γ ′点附近具有稳定的表面态.我们发现，表面状态的拓扑性质仍然具有强大的不同终端的表面。
Using density functional theory with the spin–orbit coupling included we analyze the bulk and surface electronic structure of SnBi4Te7ternary compound. It was revealed that this material is a strong topological insulator with a bulk band gap of about 100meV and a robust surface state around the Γ¯ point. We find that the topological nature of the surface state remains robust with different terminations of the surface.