Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel
Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel
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DOI：
10.1109/led.2015.2513074
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发表时间：
2016-02
影响因子：
4.9
通讯作者：
Taisuke Suwa;T. Iwasaki;Kazuki Sato;H. Kato;T. Makino;M. Ogura;D. Takeuchi;S. Yamasaki;M. Hatano
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文献类型：
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作者：
Taisuke Suwa;T. Iwasaki;Kazuki Sato;H. Kato;T. Makino;M. Ogura;D. Takeuchi;S. Yamasaki;M. Hatano
我们开发了窄沟道宽度的常关型金刚石结场效应晶体管。沟道宽度为0.26 μm的p沟道器件具有-3V的大阈值电压，该阈值电压与考虑沟道宽度逐渐变窄和沟道中逐渐掺杂的情况下的二次离子质谱和截面透射电子显微镜测量值相一致。我们证实，阈值电压可以很好地控制的沟道宽度。
We developed normally-off diamond junction field-effect transistors with narrow channel widths. The p-channel device with the narrowest channel width of 0.26 μm showed a large threshold voltage of -3 V. The obtained threshold voltage is consistent with the value estimated by considering the tapered channel width and the gradual-doping in the channel, which were measured by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. We confirmed that the threshold voltage can be well controlled by the channel width.