TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON
TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON
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硅中陷阱限制的间隙扩散和增强的硼团簇
DOI：
10.1063/1.114015
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发表时间：
1995
影响因子：
4
通讯作者：
H. Luftman
中科院分区：
文献类型：
--
作者：
P. Stolk;H. Gossmann;D. Eaglesham;D. Jacobson;J. Poate;H. Luftman
硼掺杂的超晶格已经被用来检测硅中自间隙的扩散。通过注入40 keV Si，在670-790°C下扩散，在近表面区域产生间隙。在670℃时，间隙扩散曲线在t≤1 h内保持平稳，表明间隙的穿透深度受到俘获的限制。圈闭的浓度估计为~ 1017/cm3。在足够长的退火时间内，间隙扩散超过捕获长度，有效的捕获限制扩散率范围从670°C时的~ 6×10−15 cm2/s到790°C时的~ 1×10−12 cm2/s。植入损伤附近的高间质过饱和导致取代B在低于B固体溶解度极限的浓度下形成亚稳簇。
Boron doped superlattices have been used to detect the diffusion of self‐interstitials in Si. Interstitials were generated in the near‐surface region by 40 keV Si implantation followed by diffusion at 670–790 °C. The interstitial diffusion profile at 670 °C is stationary for t≤1 h, demonstrating that the penetration depth of interstitials is limited by trapping. The concentration of traps is estimated to be ∼1017/cm3. For sufficiently long annealing times, interstitials diffuse beyond the trapping length with an effective trap‐limited diffusivity ranging from ∼6×10−15 cm2/s at 670 °C to ∼1×10−12 cm2/s at 790 °C. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit.