Dependence of internal quantum efficiency on doping region and Siconcentration in Al-rich AlGaNternary alloy films probed by cross-sectional scanning near-fieldoptical microscopy
Dependence of internal quantum efficiency on doping region and Siconcentration in Al-rich AlGaNternary alloy films probed by cross-sectional scanning near-fieldoptical microscopy
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通过截面扫描近场光学显微镜探测富铝 AlGaN 三元合金薄膜中内量子效率对掺杂区域和 Si 浓度的依赖性
DOI：
10.1143/jjap.51.035604
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发表时间：
2012
影响因子：
1.5
通讯作者：
K. Hiramatsu
中科院分区：
文献类型：
--
作者：
H. Murotani;K. Anai;D. Akase;Y.Yamada;H. Miyake;K. Hiramatsu
利用高分辨率光致发光成像和横断面扫描近场光学显微镜（SNOM）技术，系统地研究了气桥横向外延生长（ABLEG） AlGaN三元合金薄膜中铝含量的空间不均匀性。我们观察了四种不同掩膜宽度的AlGaN薄膜沿垂直< 0001>和水平< 11 bar 20 >生长方向的含量变化。空间不均匀性是通过考虑以下因素来确定的：横向和垂直方向的不同生长速率，铝和镓的吸附原子供应取决于掩膜宽度，以及铝和镓的吸附原子在（0001）和（11 bar 20）面的扩散。
We systematically studied spatial inhomogeneity of aluminum content in air-bridged lateral epitaxially grown (ABLEG) AlGaN ternary alloy films by high-resolution photoluminescence mapping probed with cross-sectional scanning near-field optical microscopy (SNOM). We observed the content changes along the vertical< 0001> and the horizontal< 11 bar 2 0> growth directions in AlGaN films with four different mask widths. The spatial inhomogeneity was determined by considering the following factors: the different growth rates of the lateral and vertical directions, the aluminum and gallium adatom supplies from a gas that depend on mask width, and the aluminum and gallium adatom diffusions on the (0001) and (11 bar 2 0) facets.