Photoemission from GaN
Photoemission from GaN
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DOI：
10.1063/1.1655276
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发表时间：
1974-07
影响因子：
4
通讯作者：
J. Pankove;H. Schade
中科院分区：
文献类型：
--
作者：
J. Pankove;H. Schade
光电发射产率测量在热清洁和cesiated表面的简并n型和半绝缘GaN上进行。热清洁的n型材料的光电发射阈值发生在4.1 eV处，而半绝缘材料的光电发射阈值超过实验光谱范围5.5 eV。从这些测量中导出热清洁GaN的电子亲和力的上限和下限，即4.1 > x> 2.1eV。在两种材料上的铯化表面的阈值降低到1.5eV，并且光产率曲线在约3.4eV处表现出第二阈值。负电子亲和势的发生，建议为cesiated半绝缘GaN。
Photoemissive yield measurements were performed on degenerate n‐type and semi‐insulating GaN for heat‐cleaned and for cesiated surfaces. The photoemissive threshold for heat‐cleaned n‐type material occurs at 4.1 eV, while that for semi‐insulating material is beyond 5.5 eV, the experimental spectral range. From these measurements an upper and a lower limit of the electron affinity of heat‐cleaned GaN is derived, namely 4.1 > χ > 2.1 eV. The threshold for cesiated surfaces on both materials is lowered to 1.5 eV, and the photoyield curve exhibits a second threshold at about 3.4 eV. The occurrence of negative electron affinity is suggested for cesiated semi‐insulating GaN.