Spin Blocker Using the Interband Rashba Effect in Symmetric Double Quantum Wells
Spin Blocker Using the Interband Rashba Effect in Symmetric Double Quantum Wells
复制标题
在对称双量子阱中利用带间 Rashba 效应的自旋阻断剂
DOI：
10.1103/physrevapplied.4.034010
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发表时间：
2015
影响因子：
4.6
通讯作者：
and T. Koga
中科院分区：
文献类型：
--
作者：
S. Souma;A. Sawada;H. Chen;Y. Sekine;M. Eto;and T. Koga
We propose a lateral spin-blockade device that uses the interband Rashba effect in a symmetric double quantum well (QW), where the Rashba effect in the conventional sense vanishes because of its inversion symmetry. The interband Rashba effect manifests itself in the off-diagonal term (represented by the parameter) in the QW space using the bonding and antibonding basis [Esmerindo Bernardes, John Schliemann, Minchul Lee, J. Carlos Egues, and Daniel Loss, Phys. Rev. Lett. 99, 076603 (2007)]. In such a system, spin selection is possible by tuning the device length, gate electric field and in-plane magnetic field. We particularly show illustrative mechanisms using a one-dimensional model with, where the selected spin can be blocked completely in the presence of the in-plane magnetic field. While the inclusion of the finiteand/or the gate electric field deteriorates the spin polarization, finite values remain for(). Our proposal can also be regarded as an effective way of enhancing a variation of the Rashba-Edelstein effect, the generation of bulk spin polarization by electric current, based on semiconductor band engineering technology.
