Extension of Atomic Mixing, Surface Roughness and Information Depth Model for Auger Electron Spectroscopy Sputter-Depth Profile Using Tilted Cylindrical Mirror Analyzer
Extension of Atomic Mixing, Surface Roughness and Information Depth Model for Auger Electron Spectroscopy Sputter-Depth Profile Using Tilted Cylindrical Mirror Analyzer
复制标题
使用倾斜柱面镜分析仪扩展俄歇电子能谱溅射深度剖面的原子混合、表面粗糙度和信息深度模型
DOI：
10.1143/jjap.42.7580
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
Y. Takai
中科院分区：
文献类型：
--
作者：
Takuya Bungo;Yuzuru Mizuhara;T. Nagatomi;Y. Takai
将原子混合、表面粗糙度和信息深度（MRI）模型扩展到描述俄歇电子能谱（AES）的表面粗糙度-深度分布。考虑到探测到的俄歇电子的信息深度对CMA入射角的依赖性的影响，进行了扩展。利用扩展的MRI模型分析了GaAs/AlAs超晶格材料的Al-LVV和Al-KLL深度分布。研究结果表明，在混合层厚度小于信息深度的条件下，扩展MRI模型计算的深度分布可以与倾斜CMA测量的实验深度分布相拟合。与此相反，由传统的MRI模型计算的深度剖面不能跟踪实验的。本研究证实，扩展的MRI模型是非常值得应用的AES深度分布的分析，使用倾斜CMA与低能量离子的小于几百eV，这是预计将减少损伤层的厚度。
An atomic mixing, surface roughness and information depth (MRI) model was extended to describe Auger electron spectroscopy (AES) sputter-depth profiles measured using a cylindrical mirror analyzer (CMA) tilted at oblique angle. The extension was performed by taking into account the effects of the dependence of the information depth of detected Auger electrons on the azimuthal angle of the entrance of the CMA. Al-LVV and Al-KLL depth profiles of a GaAs/AlAs superlattice material were analyzed using the extended MRI model. The present results revealed that the depth profiles calculated by the extended MRI model can be fitted to the experimental ones measured using the tilted CMA under the condition that the thickness of the mixing layer is smaller than the information depth. In contrast, the depth profiles calculated by the conventional MRI model can not trace the experimental ones. The present study confirmed that the extended MRI model is well worthy of application to the analysis of the AES depth profiles obtained using the tilted CMA with low-energy ions of less than a couple of hundreds eV, which is expected to reduce the thickness of the damaged layer.