Thermal infrared emission from biased graphene
Thermal infrared emission from biased graphene
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DOI：
10.1038/nnano.2010.90
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发表时间：
2010-07-01
影响因子：
38.3
通讯作者：
Avouris, Phaedon
中科院分区：
文献类型：
--
作者：
Freitag, Marcus;Chiu, Hsin-Ying;Avouris, Phaedon
The high carrier mobility(1,2) and thermal conductivity(3,4) of graphene make it a candidate material for future high-speed electronic devices(5). Although the thermal behaviour of high-speed devices can limit their performance, the thermal properties of graphene devices remain incompletely understood. Here, we show that spatially resolved thermal radiation from biased graphene transistors can be used to extract the temperature distribution, carrier densities and spatial location of the Dirac point in the graphene channel. The graphene exhibits a temperature maximum with a location that can be controlled by the gate voltage. Stationary hot spots are also observed. Infrared emission represents a convenient and non-invasive characterization tool for graphene devices.
