Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
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单光子功率和低温下沉积的硅和锗薄膜电介质的微波损耗低
DOI：
10.1063/5.0041525
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发表时间：
2020
期刊：
影响因子：
1.6
通讯作者：
N. Newman
中科院分区：
文献类型：
--
作者：
C. Kopas;J. Gonzales;Shengke Zhang;D. Queen;B. Wagner;M. Robinson;J. Huffman;N. Newman
我们的研究表明，沉积的Ge和Si介电薄膜可以表现出低的微波损耗在近单光子功率和亚开尔文温度（约40 mK）。这种低损耗使其能够用于各种器件，包括低损耗共面、微带和带状线谐振器，以及用于微波和约瑟夫森结电路制造中的器件隔离、布线间隔离和钝化的层。我们使用共面微波谐振器结构与窄的2-5 $\mu \textrm{m}$的宽度，以最大限度地提高灵敏度的损耗角正切测量的界面和性能的沉积的金属，而不是优化的品质因数。在这种结构中，热蒸发的约1 μ m厚的非晶锗（a-Ge）薄膜沉积在Si（100）上，其单光子损耗角正切为1 - 2 × 10 ^{-6}$，而9 μ m厚的化学气相沉积（CVD）同质外延Si的单光子损耗角正切为0.6 - 2 × 10^{-5}$。仿真结果表明，界面损耗是不可忽略的。
Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths of 2-5 $\mu \textrm{m}$ to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally-evaporated $\approx 1 \mu \textrm{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2\times10^{-6}$ and, $9 \mu \textrm{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single photon loss tangent of $0.6-2\times 10^{-5}$. Simulations indicate that interface losses are non-negligible.
影响因子：
7.6
作者：
Lisenfeld, Juergen;Bilmes, Alexander;Ustinov, Alexey V.
通讯作者：
Ustinov, Alexey V.