Rapid thermal N2O oxynitride on Si(100)
Rapid thermal N2O oxynitride on Si(100)
复制标题
Si(100) 上快速热 N2O 氮氧化物
DOI：
10.1116/1.588929
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发表时间：
1996
影响因子：
1.4
通讯作者：
S. Tay
中科院分区：
文献类型：
--
作者：
Z. Lu;R. J. Hussey;M. J. Graham;R. Cao;S. Tay
采用高分辨率x射线光电子能谱（XPS）和二次离子质谱技术，研究了快速热氧化法（rtp）或传统炉法生成的氮化氧膜中N的化学性质和分布。炉内氧化物在N2O中的生长动力学比在O2中的生长动力学慢。在再氧化过程中，氧化速率增加到纯O2中，并且在SiO2-Si界面区域的N被置换到氧化物的主体中。采用高分辨率同步加速器Si 2p核能级光电发射光谱（PES）研究了氮存在和不存在时RTP生成的氧化物- Si（100）界面亚氧化物结构。XPS N 1s研究表明，RTP氧化氮膜中存在两种类型的N。第一类N的化学键构型与Si3N4中的N相似，主要分布在距离界面前1nm内。第二类N主要分布在前1nm区域外，N可能是…
High‐resolution x‐ray photoelectron spectroscopy (XPS) in conjunction with secondary‐ion‐mass spectrometry was used to study the chemical nature and distribution of N in oxynitride films formed by rapid thermal N2O processes (RTPs) or conventional furnace methods. The kinetics of furnace oxide growth in N2O are slower than that in O2. During reoxidation the oxidation rate increased to that in pure O2 and the N in the SiO2–Si interface region is displaced into the bulk of the oxide. High‐resolution synchrotron Si 2p core‐level photoemission spectroscopy (PES) was used to study the oxide–Si(100) interface suboxide structures produced by RTP with and without the presence of N. XPS N 1s studies indicated that there are two types of N in the RTP oxynitride films. The chemical bond configuration of the first type of N is similar to that of N in Si3N4 and is mainly distributed within the first 1 nm from the interface. The second type of N is distributed mainly outside of the first 1 nm region, and the N is likel...