Enhancing the electrical and optoelectronic performance of nanobelt devices by molecular surface functionalization
Enhancing the electrical and optoelectronic performance of nanobelt devices by molecular surface functionalization
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DOI：
10.1021/nl070359m
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发表时间：
2007-05-01
期刊：
影响因子：
10.8
通讯作者：
Wang, Z. L.
中科院分区：
文献类型：
--
作者：
Lao, Changshi;Li, Yi;Wang, Z. L.
通过在ZnO纳米带（NB）表面形成一层自组装分子层，可以显著提高单个NB基器件的电学和光电性能。对于单个基于NB的器件，由于能带调谐和表面改性，电导在功能化后提高了6个数量级;涂层分子层将肖特基接触改变为欧姆接触，而无需复杂的多层金属沉积。功能化的NB表现出负微分电阻，并表现出巨大的改善光电导和气敏响应。功能化的分子层还大大降低了缓冲溶液对ZnO NB的蚀刻速率，大大延长了它们在生物医学应用中的寿命。我们的研究展示了一种新的方法，用于改善器件应用的氧化物NB和纳米线的物理性能。
By functionalizing the surfaces of ZnO nanobelts (NBs) with a thin self-assembled molecular layer, the electrical and optoelectronic performances of a single NB-based device are drastically improved. For a single NB-based device, due to energy band tuning and surface modification, the conductance was enhanced by 6 orders of magnitude upon functionalization; a coating molecule layer has changed a Schottky contact into an Ohmic contact without sophisticated deposition of multilayered metals. A functionalized NB showed negative differential resistance and exhibited huge improved photoconductivity and gas sensing response. The functionalized molecular layer also greatly reduced the etching rate of the ZnO NBs by buffer solution, largely extending their life time for biomedical applications. Our study demonstrates a new approach for improving the physical properties of oxide NBs and nanowires for device applications.