Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits
Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits
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DOI：
10.1109/2944.640641
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发表时间：
1997-06-01
影响因子：
4.9
通讯作者：
Jones, AM
中科院分区：
文献类型：
--
作者：
Coleman, JJ;Lammert, RM;Jones, AM
综述了选区金属有机化学气相沉积(MOCVD)集成光子器件的研究进展。概述了用三步法制作掩埋异质结(BH)所涉及的工艺步骤，并给出了一个预测选区MOCVD增强行为的计算模型。综述了几种分立和集成光子器件的研究结果。其中包括低阈值BH激光器、集成内腔或外腔调制器的激光二极管、集成调制器和无源y结波导的双通道发射器以及宽带发光二极管(LED)。
The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BH's) by a three-step technique art outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrated photonic devices. These include low-threshold BH lasers, laser diodes integrated with either intracavity or external cavity modulators, dual-channel emitters integrated with both modulators and passive y-junction waveguides, and broad-band light-emitting diodes (LED's).