Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results
Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results
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1.2 kV 4H-SiC JBSFET 的新型八角形单元拓扑与线性和六角形拓扑的比较：分析和实验结果
DOI：
10.1109/ispsd.2019.8757565
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
B. Baliga
中科院分区：
文献类型：
--
作者：
Kijeong Han;Aditi Agarwal;B. Baliga
本文比较了实验获得的电气特性的一种新的八角形（Oct）单元拓扑结构的1.2 kV额定4 H-SiC JBSFETTER与线性和Hex（Hex）单元拓扑结构的第一次。在6英寸的铸造厂使用相同的工艺流程制造各种电池拓扑。Oct JBSFET中JBS二极管的第三象限通态压降通过在电池内使用足够的JBS二极管面积与线性电池设计相匹配。实验结果表明，Oct JBSFET具有1.7倍和2.2倍更好的HF-FOM [$\mathbf{R}_{\mathbf{on}}\times \mathbf{Q}_{\mathbf{gd}}$]相比，线性和十六进制单元JBSFET，分别。此外，Oct JBSFER具有更上级的[Ciss/Crss]比，可在高频开关期间抑制击穿电流。
This paper compares experimentally obtained electrical characteristics of a novel Octagonal (Oct) cell topology for 1.2 kV-rated 4H-SiC JBSFETs with the Linear and Hexagonal (Hex) cell topologies for the first time. The various cell topologies were fabricated using the same process flow at a 6-inch foundry. The third quadrant on-state voltage drop for the JBS diode in the Oct JBSFET was matched with the Linear cell design by using adequate JBS diode area within the cell. Experimental results demonstrate that the Oct JBSFET has 1.7× and 2.2× better HF-FOM [$\mathbf{R}_{\mathbf{on}}\times \mathbf{Q}_{\mathbf{gd}}$] compared with the Linear and Hex cell JBSFETs, respectively. In addition, the Oct JBSFETs have a much superior [Ciss/Crss] ratio to suppress shoot through currents during high frequency switching.