Orientation studies of Si-phthalocyanine sulfonic acids cast on SiOx substrates
Orientation studies of Si-phthalocyanine sulfonic acids cast on SiOx substrates
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SiOx 基底上硅酞菁磺酸的取向研究
DOI:
10.1007/s003390201320
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发表时间:
2003
期刊:
影响因子:
--
通讯作者:
D. Schmeißer
中科院分区:
文献类型:
--
作者:
Guenter Appel;H. Ade;A. Guerek;S. Stadler;R. Mikalo;D. Schmeißer
Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-μ-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by angle-dependent near-edge X-ray absorption fine-structure spectroscopy. The morphology was characterized by atomic force microscopy. Most samples exhibited a significant orientation that was accompanied by crystalline structures; others had no orientation at all with a dominant amorphous morphology. This behavior indicates that several preparation parameters affect the crystallinity and the orientation of the phthalocyanines.