Proposal and physics of AlInN-delta-GaN quantum well ultraviolet lasers
Proposal and physics of AlInN-delta-GaN quantum well ultraviolet lasers
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DOI：
10.1063/1.4942524
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发表时间：
2016-02
影响因子：
3.2
通讯作者：
Cheng Liu;Y. Ooi;Jing Zhang
中科院分区：
文献类型：
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作者：
Cheng Liu;Y. Ooi;Jing Zhang
提出并研究了利用Aln-Delta-GaN量子阱有源区作为波长(λ)∼)为250-300 nm的紫外光激光器。有源区的设计由24A交错的Al0.91In0.09N/Al0.82In0.18N层和3A晶格匹配的GaN三角层组成，从而实现了主导导带(C)到重空穴(HH)亚带的转变。此外，超薄的Delta GaN层的插入将使电子-空穴波函数强烈地向量子阱中心局域化，从而导致较大的横向电(TE)偏振光增益。与传统的AlGaN量子阱系统相比，提出的Alinn-Delta-GaN量子阱结构使∼在255 nm处的TE增益提高了3倍。通过调节增量GaN的厚度，可以获得高达3700 cm−1的λ∼光增益，这是一种非常有前途的高效紫外激光器的替代有源区。
The use of AlInN-delta-GaN quantum wells (QWs) active region for ultraviolet (UV) laser with wavelength (λ) ∼ 250–300 nm was proposed and investigated in this work. The design of active region consists of 24 A staggered Al0.91In0.09N/Al0.82In0.18N layers with a 3 A lattice-matched GaN delta layer, which enables dominant conduction band (C) to heavy hole (HH) subband transition. In addition, the insertion of the ultra-thin delta GaN layer will strongly localize the electron-hole wave functions toward the center of the QW, which leads to large transverse electric (TE) polarized optical gain. In comparison to the use of a conventional AlGaN QW system, the proposed AlInN-delta-GaN QW structure results in ∼3 times improvement in TE-gain at 255 nm. By tuning the delta-GaN thickness, the TE-polarized optical gain up to 3700 cm−1 can be obtained for λ ∼ 280–300 nm, which is very promising to serve as an alternative active region for high-efficiency UV lasers.