Electrochemical fabrication of highly ordered semiconductor and metallic nanowire arrays
Electrochemical fabrication of highly ordered semiconductor and metallic nanowire arrays
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DOI：
10.1021/cm0007297
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发表时间：
2001-08-01
影响因子：
8.6
通讯作者：
Zhao, LX
中科院分区：
文献类型：
--
作者：
Zhang, XY;Zhang, LD;Zhao, LX
在本文中，我们报道了通过在六方密堆积纳米通道氧化铝 (NCA) 内阳极氧化水解 TiCl3 来制造高度有序的 TiO2 纳米线阵列。 500℃退火后得到直径约15nm、长度约6μm的单晶锐钛矿型TiO2纳米线。最后，还报道了具有可选直径的高度有序的金和镍纳米线阵列的制造和表征。
In this article, we report the fabrication of highly ordered TiO2 nanowire arrays by anodic oxidative hydrolysis of TiCl3 within a hexagonal close-packed nanochannel alumina (NCA). The single-crystalline anatase TiO2 nanowires with diameters about 15 nm and lengths about 6 mum are obtained after annealing at 500 degreesC. Finally, the fabrication and characterization of highly ordered Au and Ni nanowire arrays with selectable diameters are also reported.