The K-shell Auger electron spectrum of gadolinium obtained using neutron capture in a solid state device
The K-shell Auger electron spectrum of gadolinium obtained using neutron capture in a solid state device
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在固态装置中使用中子俘获获得的钆的 K 壳俄歇电子能谱
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
P. Dowben
中科院分区：
文献类型：
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作者：
David Schultz;B. Blasy;J. A. Santana;Christopher Young;J. Petrosky;J. McClory;D. Lagraffe;J. I. Brand;Jinke Tang;Wendong Wang;N. Schemm;S. Balkir;M. Bauer;I. Ketsman;R. Fairchild;Y. Losovyj;P. Dowben
在HfO2薄膜中高掺杂或合金化的Gd2O3与硅形成异质结二极管。单中子俘获事件可以用Hf0.85Gd0.15O1.93到n型硅异质结来识别。在较长的脉冲积分时间和较小的脉冲被抑制的情况下，关键的脉冲高度谱特征与蒙特卡罗模拟所预测的一致。后者与Gd在中子俘获后的衰变通道非常吻合，特别是那些涉及Gd K壳层俄歇电子共振的通道。
Highly doped or alloyed Gd2O3 in HfO2 films form heterojunction diodes with silicon. Single neutron capture events can be identified with a Hf0.85Gd0.15O1.93 to n-type silicon heterojunction. With long pulse integration times and suppression of the smaller pulses, there is agreement between the key pulse height spectral features and those predicted by Monte Carlo simulations. The latter align very well with the decay channels of the Gd following neutron capture, particularly those involving the Gd K-shell Auger electron resonances.