Chemical Vapor Deposition Synthesis and Terahertz Photoconductivity of Low-Band-Gap N=9 Armchair Graphene Nanoribbons
Chemical Vapor Deposition Synthesis and Terahertz Photoconductivity of Low-Band-Gap N=9 Armchair Graphene Nanoribbons
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DOI：
10.1021/jacs.7b00776
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发表时间：
2017-03-15
影响因子：
15
通讯作者：
Muellen, Klaus
中科院分区：
文献类型：
--
作者：
Chen, Zongping;Wang, Hai I.;Muellen, Klaus
自底向上合成具有不同微观结构和性能的原子定义石墨烯纳米带（GNRs）的最新进展显示了其在电子和光电子器件中的应用前景。本研究通过高效的化学气相沉积工艺合成了N = 9扶手型石墨烯纳米带（9- agnrs），其光学带隙低至4.0 eV，吸收范围扩展到红外范围。利用时间分辨太赫兹光谱对9-AGNRs的光电性进行了表征，发现它们具有约350 cm(2) v . 1.s（-1）的高特性电荷载流子迁移率。
Recent advances in bottom-up synthesis of atomically defined graphene nanoribbons (GNRs) with various microstructures and properties have demonstrated their promise in electronic and optoelectronic devices. Here we synthesized N = 9 armchair graphene nanoribbons (9-AGNRs) with a low optical band gap of-4.0 eV and extended absorption into the infrared range by an efficient chemical vapor deposition process. Time-resolved terahertz spectroscopy was employed to characterize the photoconductivity in 9-AGNRs and revealed their high intrinsic charge-carrier mobility of approximately 350 cm(2) V-1.s(-1).