Growth of GaSb and InSb quantum dots on GaAs (311)A by droplet epitaxy
Growth of GaSb and InSb quantum dots on GaAs (311)A by droplet epitaxy
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通过液滴外延在 GaAs (311)A 上生长 GaSb 和 InSb 量子点
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
H. Sakaki
中科院分区：
文献类型：
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作者：
T. Kawazu;Takeshi Noda;T. Mano;M. Ohmori;Y. Akiyama;H. Sakaki
本文研究了用液滴外延法在GaAs（311）A表面生长GaSb量子点。通过原子力显微镜研究发现，在GaAs（311）A上形成的GaSb量子点比（100）A上的量子点更小、更致密。我们还尝试通过液滴外延生长InSb量子点。在GaAs（100）衬底上，形成大的环状结构来代替QD结构。相反，InSb量子点成功地生长在GaAs（311）A衬底上。研究了量子点的光致发光特性。（© 2011 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have studied the growth of GaSb quantum dots (QDs) on GaAs (311)A surfaces by droplet epitaxy. By atomic force microscopic studies, it was found that smaller and denser GaSb QDs are formed on GaAs (311)A than (100). We also tried to grow InSb QDs by droplet epitaxy. On a GaAs (100) substrate, a large ring-like structure is formed instead of a QD structure. In contrast, InSb QDs were successfully grown on a GaAs (311)A substrate. Photoluminescence properties of these QDs were also investigated. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)