Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon
Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon
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DOI：
10.1103/physrevb.77.205304
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发表时间：
2008-05
影响因子：
3.7
通讯作者：
Deepthi Gopireddy;C. Takoudis
中科院分区：
文献类型：
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作者：
Deepthi Gopireddy;C. Takoudis
我们提出了硅上高介电常数薄膜在氧气和/或惰性环境中热退火的定量物理化学模型。特别是，我们研究了高材料结构/Si 界面处界面层生长的动力学。退火后，定量评估高膜中氧物质向硅界面的传输。一维非稳态扩散反应方程用于模拟界面层厚度的时间演化。由于界面层不断增加，所提出的模型结合了改变氧物质扩散长度的移动界面。所得建模方程的数值解基于有限体积分析方法，其结果是厚度剖面，其中包括早期快速生长阶段，随后是赝饱和进入自限状态。我们的模型预测与已发表的实验结果令人满意地一致。我们还研究了使用氧化铝作为潜在的氧扩散屏障。预计氧化铝将成为氧扩散的有效屏障，这与已发表的实验数据一致。
We present the quantitative physicochemical modeling of the thermal annealing of high dielectric constantthin films on silicon in oxygen and/or inert ambient. In particular, we study the kinetics of theinterfacial layer growth at the high-material structure/Si interface. Upon annealing, the transport of oxygen species in the high-film to the silicon interface is quantitatively evaluated. One-dimensional unsteady-state diffusion-reaction equations are used to model the time evolution of the interfaciallayer thickness. Because of the continuously increasing interfaciallayer, the proposed model incorporates the moving interface that alters the diffusion length of the oxygen species. The numerical solution of the resulting modeling equations is based on the finite volume analysis method and it results inthickness profiles that comprise of an early fast growth stage followed by pseudosaturation into a self-limited regime. Our model predictions are found to satisfactorily agree with published experimental results. We also study the use of alumina as a potential oxygen diffusion barrier. Alumina is predicted to be an efficient barrier to oxygen diffusion, which is in agreement with published experimental data.