Nanoscale material parameters based modeling of thermal noise in GaN HEMTs
Nanoscale material parameters based modeling of thermal noise in GaN HEMTs
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基于纳米级材料参数的 GaN HEMT 热噪声建模
DOI：
10.1088/1361-6641/abd265
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
A. Singh
中科院分区：
文献类型：
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作者：
M. Madhulika;A. Malik;Priyanka Kamboj;S. Awasthi;Priyanka Thakur;N. Jain;M. Mishra;Sanjeev Kumar;D. S. Rawal;A. Singh
在本文中，我们提出了一种改进的分析模型，用于预测高电子迁移率晶体管（HEMT）中的热噪声，该模型考虑了材料在纳米尺度上的固有特性，特别是其介电常数和熔点。所开发的模型进行了验证，从AlGaN/GaN基二维电子气制造的不同器件结构的实验数据与计算机模拟得到的结果进行比较。此外，它表明，纳米材料的结构特性必须被考虑到准确地估计HEMT器件的噪声特性。
In this paper, we present an improved analytical model for predicting thermal noise in high-electron-mobility transistors (HEMTs) that considers the material's intrinsic properties at the nanoscale, specifically, its permittivity and melting point. The developed model is validated by comparing the results obtained from the computer simulation with experimental data for different device structures fabricated from an AlGaN/GaN-based two-dimensional electron gas. Furthermore, it is demonstrated that the nanoscale material's structural properties have to be considered to estimate the noise characteristics of the HEMT device accurately.