Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy
Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy
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DOI：
10.1109/ted.2006.888676
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发表时间：
2007-04
影响因子：
3.1
通讯作者：
Kunihiro Suzuki;Yuji Kataoka;S. Nagayama;Charles W. Magee;T. Büyüklimanli;Tsutomu Nagayama
中科院分区：
文献类型：
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作者：
Kunihiro Suzuki;Yuji Kataoka;S. Nagayama;Charles W. Magee;T. Büyüklimanli;Tsutomu Nagayama
我们利用卢瑟福背散射光谱(RBS)研究了固相外延过程中离子注入杂质的再分布情况。RBS数据表明，As浓度只在移动的非晶/晶体界面附近发生变化。我们用非晶态和晶态硅之间的分凝系数m建立了再分布分布的解析模型，引入了杂质交换距离反应长度L的参数，并与实验数据进行了比较，得到As的m值为3，L值为1 nm。此外，将我们的模型应用于P和B的再分布剖面，得到了与P的m值为4和L的值1 nm以及B的m值为0.3和L的值1 nm的很好的吻合
We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data revealed that the As concentration changes only near the moving amorphous/crystal interface. We derived an analytical model for the redistribution profiles using a segregation coefficient m between amorphous and crystalline Si, introduced a parameter of reaction length l that is the distance where impurities were exchanged, and obtained good agreement with experimental data with an m value of 3 and an l value of 1 nm for As. Furthermore, we applied our model to P and B redistribution profiles and obtained good agreement with corresponding m value of 4 and l value of 1 nm for P and m value of 0.3 and l value of 1 nm for B