Mixed-dimensional PdSe2/SiNWA heterostructures based photovoltaic detectors towards self-driven, broadband photodetection, infrared imaging and humidity sensing

Mixed-dimensional PdSe2/SiNWA heterostructures based photovoltaic detectors towards self-driven, broadband photodetection, infrared imaging and humidity sensing
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基于混合维 PdSe2/SiNWA 异质结构的光伏探测器,用于自驱动、宽带光电探测、红外成像和湿度传感

DOI:
10.1039/c9ta13611h
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发表时间:
2020
影响因子:
11.9
通讯作者:
Jiansheng Jie
Jiansheng Jie
中科院分区:
材料科学2区
文献类型:
--
作者:
Di Wu;Cheng Jia;Fenghua Shi;Longhui Zeng;Pei Lin;Lin Dong;Zhifeng Shi;Yongtao Tian;Xinjian Li;Jiansheng Jie

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二维二硒化钯(PdSe 2)薄膜由于其独特的非对称晶体结构和优异的光电性能,在宽带和偏振光电探测方面显示出巨大的潜力,引起了人们的广泛关注。在此,我们首次开发了一种基于PdSe 2/Si纳米线阵列(SiNWA)异质结构的自驱动、高偏振灵敏度、宽带光伏探测器。由于SiNWA的强光限域效应和PdSe 2的宽带光吸收,该器件表现出显著的光伏特性和优异的性能:726 mA W−1的高响应率、3.19 × 1014 Jones的高比探测率、0.2-4.6 μm的超宽光谱响应范围、和快速响应速度来监测纳秒脉冲光信号。值得注意的是,异质结构器件实现了令人印象深刻的75的偏振灵敏度,这是基于2D材料的光电探测器中最高的。由于出色的成像能力,该探测器可以以相当高的分辨率记录近红外(NIR)和中红外(MIR)范围内的图像。此外,该器件具有光增强的湿度感测行为,具有高灵敏度和快速的响应/恢复时间。鉴于这些显着的设备功能,PdSe 2/SiNWA异质结构将举行高性能,偏振敏感的宽带光电探测,红外成像和湿度传感应用的巨大希望。
The new discovery of two-dimensional (2D) palladium diselenide (PdSe2) films has attracted intensive research interest due to their unique asymmetric crystal structure and extraordinary optoelectronic properties, showing great potential for broadband and polarization photodetection. Herein, we have developed for the first time a self-driven, highly polarization-sensitive, broadband photovoltaic detector based on a PdSe2/Si nanowire array (SiNWA) heterostructure. Owing to the strong light confinement effect of the SiNWA and broadband light absorption of PdSe2, the present device exhibits pronounced photovoltaic behavior and excellent performance in terms of a high responsivity of 726 mA W−1, a large specific detectivity of 3.19 × 1014 Jones, an ultrabroad spectrum response range of 0.2–4.6 μm, and a fast response speed to monitor nanosecond pulsed light signals. Significantly, an impressive polarization sensitivity of 75 is achieved for the heterostructure device, which is among the highest for 2D material-based photodetectors. Thanks to the outstanding imaging capability, the detector can record images in both near infrared (NIR) and mid-infrared (MIR) ranges with a decent resolution. Moreover, the device exhibits light-enhanced humidity sensing behavior with a high sensitivity and a fast response/recovery time. Given these remarkable device features, the PdSe2/SiNWA heterostructure will hold great promise for high-performance, polarization-sensitive broadband photodetection, infrared imaging and humidity sensing applications.