Theory of the field-effect mobility in amorphous organic transistors
Theory of the field-effect mobility in amorphous organic transistors
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DOI：
10.1103/physrevb.57.12964
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发表时间：
1998-05-15
影响因子：
3.7
通讯作者：
Matters, M
中科院分区：
文献类型：
--
作者：
Vissenberg, MCJM;Matters, M
从理论上研究了有机薄膜晶体管的场效应迁移率。从局域态间跳跃的渗流模型和晶体管模型出发，得到了场效应迁移率的解析表达式。该理论被用于描述Brown等人[Synth， Met. 88, 37(1997)]用聚合物（聚乙烯-乙烯）和小分子（并五苯）制成的溶液加工非晶态有机晶体管的实验。在栅极电压和温度对迁移率的依赖性方面，得到了很好的一致性。
The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown er al. [Synth, Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a polymer (polythienylene vinylene) and from a small molecule (pentacene). Good agreement is obtained, with respect to both the gate voltage and the temperature dependence of the mobility.