Structural features of thick c-boron nitride coatings deposited via a graded B-C-N interlayer (vol 142, pg 881, 2001)
Structural features of thick c-boron nitride coatings deposited via a graded B-C-N interlayer (vol 142, pg 881, 2001)
复制标题
DOI：
10.1016/s0257-8972(01)01212-9
复制
发表时间：
2001-07
影响因子：
5.4
通讯作者：
K. Yamamoto;M. Keunecke;K. Bewilogua;Z. Czigány;L. Hultman
中科院分区：
文献类型：
--
作者：
K. Yamamoto;M. Keunecke;K. Bewilogua;Z. Czigány;L. Hultman
通过射频技术在Si衬底上沉积了厚的c-BN薄膜（厚度达2.7 μm）。使用碳化硼（B4 C）靶的二极管装置。在由B、C和N组成的梯度过渡层上沉积c-BN薄膜。在纯Ar气体放电条件下，在Si衬底上沉积了一层厚度约为200 nm的B_4C薄膜。梯度夹层的后续形成通过用N2气体阶梯状或平滑地替代Ar来进行。取决于所实施的方法，二次离子质谱（西姆斯）深度分布显示B、C和N的元素浓度的相对平滑或阶梯状变化。通过X射线光电子能谱（XPS）测量B1 s、C1 s和N1s谱的化学位移，对梯度夹层的化学键进行了初步分析。结果表明，随着N2含量的增加，B4 C层中的主要成键组分B <$C键逐渐被B <$N和C <$C键的混合物所取代。透射电子显微镜（TEM）观察表明，当N2浓度增加到2%以上时，开始出现（0002）取向的乱层BN（t-BN）结构。当N2含量为10%时，c-BN相在梯度层中不均匀形核。
Thick c-BN films (up to 2.7 μm) were deposited onto Si substrates by an r.f. diode apparatus using boron carbide (B4C) targets. The c-BN films were deposited on a compositionally graded interlayer, which consisted of B, C and N. A thin B4C layer (∼200 nm) had been initially deposited onto Si substrate in a pure Ar gas discharge. The following formation of the graded interlayer was conducted by step-like or smoothly replacing Ar with N2gas. Depending on the method implemented, the secondary ion mass spectroscopy (SIMS) depth profile showed relatively smooth or step-like changes in the elemental concentration of B, C and N. The primary analysis on the chemical bond of the graded interlayer was conducted by measuring the chemical shift of B1s, C1s and N1s spectra by X-ray photoelectron spectrometry (XPS). It is shown that the BC bond, which was a major bonding component in the B4C layer, was gradually replaced by a mixture of BN and CC bond as the N2fraction was increased. Transmission electron microscopy (TEM) images of the gradient layer showed that (0002) oriented turbostratic BN (t-BN) structure started to appear after the N2concentration was increased by more than 2%. It was also observed that the c-BN phase nucleated non-uniformly in the gradient layer at 10% of N2fraction.