InAs∕GaSb cascaded active region superlattice light emitting diodes for operation at 3.8μm
InAs∕GaSb cascaded active region superlattice light emitting diodes for operation at 3.8μm
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InAs/GaSb 级联有源区超晶格发光二极管，工作波长为 3.8μm
DOI：
10.1063/1.2892633
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发表时间：
2008
影响因子：
4
通讯作者：
J. Prineas
中科院分区：
文献类型：
--
作者：
E. Koerperick;J. Olesberg;T. Boggess;J. Hicks;L. S. Wassink;L. M. Murray;J. Prineas
报道了77K下3.8μm中波红外波段InAs闪烁GaSb超晶格发光二极管的生长和特性。器件在（100）GaSb衬底上采用固体源分子束外延生长，并采用湿法刻蚀制作成120×120μm2梅萨器件。采用8级级联有源区设计，在77K下，峰值驱动电流为100mA，占空比为50%，输出功率超过1.5mW。在准直流激励条件下，从室温到77K的设备的操作特性进行了检查。
We report on the growth and characterization of InAs∕GaSb superlattice light emitting diodes (LEDs) operating in the midwave infrared at 3.8μm at 77K. Devices were grown by solid source molecular beam epitaxy on (100) GaSb substrates and were fabricated into 120×120μm2 mesa devices using wet etching. By employing an eight-stage cascaded active region design, output powers in excess of 1.5mW were achieved at 77K with 100mA peak drive current and a 50% duty cycle. Operating characteristics of the devices were examined from room temperature to 77K under quasi-dc excitation conditions.