A Three-Dimensional Time-of-Flight CMOS Image Sensor With Pinned-Photodiode Pixel Structure
A Three-Dimensional Time-of-Flight CMOS Image Sensor With Pinned-Photodiode Pixel Structure
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DOI：
10.1109/led.2010.2066254
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发表时间：
2010-11-01
影响因子：
4.9
通讯作者：
Kim, Chang-Yeong
中科院分区：
文献类型：
--
作者：
Kim, Seong-Jin;Han, Sang-Wook;Kim, Chang-Yeong
提出了一种通过使用传统的钉扎光电二极管不仅提供正常的2-D图像而且提供深度信息的像素结构。这种像素架构允许传感器生成任意对象的实时3D图像。像素的操作基于飞行时间原理，在深度图像模式下检测发射的红外光脉冲和反射的红外光脉冲之间的时间延迟。像素包含五个晶体管。与传统的4-T CMOS图像传感器相比，新像素包括一个额外优化的传输门，用于高速电荷传输。为提高灵敏度，采用12 × 12 μ m（2）尺寸实现了60%以上的填充因子。制造的原型传感器在5 MHz的调制频率下成功捕获了1到4 m之间的64 x 16深度图像。深度误差在1 m处测量为2%以下，在4 m处测量为4%以下，并通过噪声分析进行了验证。
A pixel architecture for providing not only normal 2-D images but also depth information by using a conventional pinned photodiode is presented. This pixel architecture allows the sensor to generate a real-time 3-D image of an arbitrary object. The operation of the pixel is based on the time-of-flight principle detecting the time delay between the emitted and reflected infrared light pulses in a depth image mode. The pixel contains five transistors. Compared to the conventional 4-T CMOS image sensor, the new pixel includes an extra optimized transfer gate for high-speed charge transfer. A fill factor of more than 60% is achieved with a 12 x 12 mu m(2) size for increasing the sensitivity. A fabricated prototype sensor successfully captures 64 x 16 depth images between 1 and 4 m at a 5-MHz modulation frequency. The depth inaccuracy is measured under 2% at 1 m and 4% at 4 m and is verified by noise analysis.