A survey of address translation technologies for flash memories
A survey of address translation technologies for flash memories
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DOI：
10.1145/2512961
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Dongzhe Ma;Jianhua Feng;Guoliang Li
中科院分区：
文献类型：
--
作者：
Dongzhe Ma;Jianhua Feng;Guoliang Li
闪存是一种电子可擦除可编程只读存储器 (EEPROM)。与传统磁盘不同，闪存没有移动部件，是纯电子设备，因此具有独特的优势，例如较低的访问延迟、较低的功耗、较高的密度、抗震和无噪音。然而，由于闪存的特殊性，现有的应用程序无法直接在闪存上运行。闪存翻译层 (FTL) 是一个基于原始闪存构建的软件层，可模拟磁盘等普通块设备。 FTL 的主要功能包括地址转换、垃圾收集和磨损均衡。这项调查的重点是地址翻译技术，并对专利、期刊和会议记录中描述的现有方案进行了广泛的概述。
Flash is a type of Electronically Erasable Programmable Read-Only Memory (EEPROM). Different from traditional magnetic disks, flash memories have no moving parts and are purely electronic devices, giving them unique advantages, such as lower access latency, lower power consumption, higher density, shock resistance, and lack of noise. However, existing applications cannot run directly on flash memories due to their special characteristics. Flash Translation Layer (FTL) is a software layer built on raw flash memories that emulates a normal block device like magnetic disks. Primary functionalities of the FTL include address translation, garbage collection, and wear leveling. This survey focuses on address translation technologies and provides a broad overview of existing schemes described in patents, journals, and conference proceedings.