Transport properties of antimony nanowires - art. no. 085406
Transport properties of antimony nanowires - art. no. 085406
复制标题
DOI：
10.1103/physrevb.63.085406
复制
发表时间：
2001-02-15
影响因子：
3.7
通讯作者：
Dresselhaus, MS
中科院分区：
文献类型：
--
作者：
Heremans, J;Thrush, CM;Dresselhaus, MS
本文报道了直径范围从 200 到 10 nm 的锑量子线的电阻率以及纵向和横向磁阻的温度依赖性，样品是使用气相技术在多孔阳极氧化铝基质材料中制备的。提出了锑纳米线能带结构的理论计算，并使用纳米线系统的传输模型来解释测量的电阻率的温度依赖性，显示了经典和量子有限尺寸效应。磁阻在低磁场下呈二次方。在 200 nm 线中，低温 (T
This paper reports the temperature dependence of the resistivity and the longitudinal and transverse magnetoresistance of antimony quantum wires with diameters ranging from 200 down to 10 nm, The samples were prepared in porous anodic alumina host materials using the vapor-phase technique. A theoretical calculation of the band structure of Sb nanowires is presented and a transport model for nanowire systems is used to explain the measured temperature dependence of the resistivity, showing both classical and quantum finite-size effects. The magnetoresistance is quadratic at low fields. In the 200 nm wires, the low-temperature (T