Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition
Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition
复制标题
衬底偏压对离子束沉积 Cu/Ta/Si 结构热稳定性的影响
DOI：
10.1143/jjap.42.2780
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发表时间：
2003
影响因子：
1.5
通讯作者：
M. Isshiki
中科院分区：
文献类型：
--
作者：
Jaewon Lim;K. Mimura;K. Miyake;M. Yamashita;M. Isshiki
研究了Cu (100 nm)/Ta (50 nm)/Si结构的界面反应及其与Ta扩散势垒微观结构的关系。采用非质量分离离子束沉积系统，在0 ~ -200 V的不同偏置电压下在Si（100）衬底上沉积Ta薄膜。当衬底偏置电压为-125 V时，α-Ta薄膜具有非柱状结构、低电阻率（约40µΩcm）和光滑的表面。在最佳偏置电压下沉积的Ta扩散屏障阻止了Cu-Si在600°C下60分钟的相互作用，而在零偏置电压下沉积的具有柱状结构的Ta层在300°C下降解。在实验结果的基础上，研究了Cu/Ta (0 V)/Si和Cu/Ta (-125 V)/Si两种不同反应对热稳定性的影响。
The interfacial reactions of the Cu (100 nm)/Ta (50 nm)/Si structures and their relationship with the microstructure of Ta diffusion barrier are investigated. Ta films were deposited on Si (100) substrates using a non-mass separated ion beam deposition system at various bias voltages ranging from 0 to -200 V. An optimum applied substrate bias voltage of -125 V was found to yield a dominant α-Ta film with a noncolumnar structure, low electrical resistivity (about 40 µΩcm) and smooth surface. A Ta diffusion barrier which was deposited at the optimum bias voltage prevented Cu–Si interaction up to 600°C for 60 min in flowing purified H2, whereas a Ta layer with a columnar structure, deposited at zero bias voltage, degraded at 300°C. Two different reactions of the Cu/Ta (0 V)/Si and the Cu/Ta (-125 V)/Si structures concerning the thermal stability were investigated and discussed on the basis of the experimental results.