Formation and Stability of NI(PT) Silicide on (100)SI and (111)SI
Formation and Stability of NI(PT) Silicide on (100)SI and (111)SI
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(100)SI 和 (111)SI 上 NI(PT) 硅化物的形成及其稳定性
DOI：
10.1557/proc-564-163
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
T. Osipowicz
中科院分区：
文献类型：
--
作者：
D. Mangelinck;J. Dai;S. Lahiri;C. S. Ho;T. Osipowicz
少量Pt（5原子%）的影响研究了（100）Si和（111）Si上NiSi薄膜的热稳定性。卢瑟福背散射，扫描电子显微镜和X射线衍射已被用来研究硅化物的形成，微观结构和取向。铂的添加导致二硅化物成核温度增加到900°C，从而导致NiSi在高IC处理温度下的更好稳定性。Pt的存在还诱导了（111）Si和（100）Si上的NiSi膜的织构。热稳定性的增加解释成核控制反应的概念，并应打开新的可能性，使用NiSi在自对准硅化。在硅化物中的Pt的再分配的动力学和热力学的考虑进行检查和解释。Pt的加入也提高了NiSi的团聚温度。
The effect of a small amount of Pt (5 at.%) on the thermal stability of NiSi film on (100)Si and (111 )Si has been investigated. Rutherford back scattering, Scanning Electron Microscopy, and X-ray diffraction have been used to study the formation, microstructure and orientation of the silicide. The addition of platinum results in increasing the disilicide nucleation temperature to 900°C and thus leads to a better stability of NiSi at high IC processing temperatures. The presence of Pt also induced a texture of the NiSi film both on (11 1)Si and (100)Si. The increase in thermal stability is explained in terms of nucleation controlled reaction concept and should open new possibilities for the use of NiSi in self aligned silicidation. The redistribution of Pt in the silicide is examined and explained in terms of kinetics and thermodynamics considerations. The addition of Pt also increases the temperature of agglomeration of NiSi.