Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks
Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks
复制标题
高κ栅极堆栈中的远程电荷散射降低了有效电子迁移率
DOI：
10.1143/jjap.41.4521
复制
发表时间：
2002
影响因子：
1.5
通讯作者：
K. Torii
中科院分区：
文献类型：
--
作者：
M. Hiratani;S. Saito;Y. Shimamoto;K. Torii
The mobility reduction in high-κ gate stacks is discussed in terms of remote charge scattering. The mobility is recovered by growing an additional layer of SiO2 at the interface between the high-κ dielectric and the silicon substrate. A good explanation for this finding is that the Coulomb potential which is induced by the fixed charge at the dielectric/SiO2 interface is responsible for the scattering of electrons.
