Universal Mechanism for Gas Adsorption and Electron Trapping on Oxidized Silicon
Universal Mechanism for Gas Adsorption and Electron Trapping on Oxidized Silicon
复制标题
氧化硅上气体吸附和电子捕获的通用机制
DOI：
10.1103/physrevlett.82.359
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发表时间：
1999
影响因子：
8.6
通讯作者：
H. Kreuzer
中科院分区：
文献类型：
--
作者：
N. Shamir;J. Mihaychuk;H. Driel;H. Kreuzer
We report that common gases (such as He, Ar, ${\mathrm{H}}_{2}$, ${\mathrm{O}}_{2}$, ${\mathrm{N}}_{2}$, CO) experience adsorption at oxidized silicon surfaces at 300 K via electrostatic coupling. This is deduced using contact potential measurements of the work function for gas pressure in the range ${10}^{\ensuremath{-}3}lPl{10}^{2}\mathrm{Torr}$. The adsorption can be enhanced through surface charging via internal photoemission of electrons leading to mutual electron-gas transient trapping. A simple electrostatic model based on monopole-dipole coupling results in an isotherm in agreement with the data.
We report that common gases (such as He, Ar, ${\mathrm{H}}_{2}$, ${\mathrm{O}}_{2}$, ${\mathrm{N}}_{2}$, CO) experience adsorption at oxidized silicon surfaces at 300 K via electrostatic coupling. This is deduced using contact potential measurements of the work function for gas pressure in the range ${10}^{\ensuremath{-}3}lPl{10}^{2}\mathrm{Torr}$. The adsorption can be enhanced through surface charging via internal photoemission of electrons leading to mutual electron-gas transient trapping. A simple electrostatic model based on monopole-dipole coupling results in an isotherm in agreement with the data.