N.Kamata, J.M.Z.Ocampo, T.Someya, K.Arakawa et al.: "Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN"Inst.of Phys.Conf.Series. (to be published).
N.Kamata, J.M.Z.Ocampo, T.Someya, K.Arakawa et al.: "Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN"Inst.of Phys.Conf.Series. (to be published).
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N.Kamata、J.M.Z.Ocampo、T.Someya、K.Arakawa 等人:“GaN 中带隙以下激发导致的光致发光强度变化的温度依赖性”Inst.of Phys.Conf.Series。
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