Evidence for vacancies in amorphous silicon.
Evidence for vacancies in amorphous silicon.
复制标题
非晶硅中空位的证据。
DOI：
10.1103/physrevlett.68.3714
复制
发表时间：
1992
影响因子：
8.6
通讯作者：
Custer
中科院分区：
文献类型：
--
作者：
van den Hoven GN;Liang;Niesen;Custer
The microscopic nature of defects in ion-implanted amorphous Si has been probed using Mossbauer spectroscopy. Analysis of the 119 Sn Mossbauer spectra obtained from 119 Sb in amorphous Si requires two independent sites for Sb in amorphous Si. Direct comparison of the isomer shifts and Debye temperatures of these lines with data from crystal Si demonstrates that the sites are a substitutional network site and an Sb-vacancy complex. The data suggest that point defects analogous to the crystal vacancy exist in the amorphous Si structure
