Kinetics of quasiballistic transport in nanoscale semiconductor structures: is the ballistic limit attainable at room temperature?
Kinetics of quasiballistic transport in nanoscale semiconductor structures: is the ballistic limit attainable at room temperature?
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纳米级半导体结构中的准弹道输运动力学：室温下可以达到弹道极限吗？
DOI：
10.1103/physrevlett.93.246803
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发表时间：
2004
影响因子：
8.6
通讯作者：
N. Sano
中科院分区：
文献类型：
--
作者：
N. Sano
从理论上研究纳米级半导体结构中的电子传输，以回答在室温操作下是否真的可以达到弹道极限的问题。在 n(+)-n-n(+) 测试结构的弛豫时间近似下解析求解半经典玻尔兹曼输运方程。我们证明，玻尔兹曼输运方程的解在势垒附近表现出边界层结构，因此即使在纳米级结构中，只要它们在室温下高电压下工作，活性区域的散射也不能被忽略。
Electron transport in nanoscale semiconductor structures is theoretically investigated to answer the question of whether or not the ballistic limit is really attainable under room temperature operation. The semiclassical Boltzmann transport equation is solved analytically under the relaxation time approximation for n(+)-n-n(+) test structures. We demonstrate that the solution of the Boltzmann transport equation exhibits a boundary layer structure near the potential barrier and thus the scatterings in the active region cannot be neglected even in nanoscale structures, as far as they are operated at room temperature under high applied voltages.