Ultrafast and low-power optoelectronic infrared-to-visible upconversion devices
Ultrafast and low-power optoelectronic infrared-to-visible upconversion devices
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超快、低功耗光电红外至可见光上转换器件
DOI：
10.1364/prj.7.001161
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发表时间：
2019
影响因子：
7.6
通讯作者：
Sheng Xing
中科院分区：
文献类型：
--
作者：
Shi Zhao;Ding He;Hong Hao;Cheng Dali;Rajabi Kamran;Yang Jian;Wang Yongtian;Wang Lai;Luo Yi;Liu Kaihui;Sheng Xing
具有低能量光子到高能量光子的转换的光子上转换已经被广泛研究，并且特别地应用于生物医学中用于传感、刺激和成像。传统的上转换材料依赖于非线性发光过程，具有长的衰减寿命或高的激发功率。在这里，我们提出了一个微型，光电红外到可见光上转换器件的设计，可以在低功率（1-100 mW/cm 2）激发。通过操纵器件的几何形状、照明位置和温度，可以将器件的发光衰减寿命从几十纳秒调整到几百纳秒。基于载流子输运和电路动力学，建立了理论模型来理解瞬态行为。与其他机制相比，光电上转换方法表现出最短的发光寿命和最低的激发功率，由于其独特的光电转换过程。这些功能有望使该器件具有作为高性能光发射器的多功能应用的基本功能。
Photon upconversion with transformation of low-energy photons to high-energy photons has been widely studied and especially applied in biomedicine for sensing, stimulation, and imaging. Conventional upconversion materials rely on nonlinear luminescence processes, suffering from long decay lifetime or high excitation power. Here, we present a microscale, optoelectronic infrared-to-visible upconversion device design that can be excited at low power (1–100 mW/cm2). By manipulating device geometry, illumination position, and temperature, the device luminescence decay lifetime can be tuned from tens to hundreds of nanoseconds. Based on carrier transportation and circuit dynamics, theoretical models are established to understand the transient behaviors. Compared with other mechanisms, the optoelectronic upconversion approach demonstrates the shortest luminescence lifetime with the lowest required excitation power, owing to its unique photon–electron conversion process. These features are expected to empower the device with essential capabilities for versatile applications as high-performance light emitters.