Si/SiGe Tunneling Static Random Access Memories
Si/SiGe Tunneling Static Random Access Memories
复制标题
Si/SiGe 隧道静态随机存取存储器
DOI：
10.1149/05009.0987ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Ternent G
中科院分区：
文献类型：
--
作者：
Ternent G
MOSFET器件低功率工作的限制之一是器件中pn结所限定的最小亚阈值斜率。隧道静态随机存取存储器的电源电压为0.42 V，远低于MOSFET技术能够提供的最低电源电压。该存储器是使用两个Si/SiGe共振隧穿二极管的峰值电压为0.175 V的硅衬底上制作的。
One of the limits to the low power operation of MOSFET devices is the minimum subthreshold slope defined by the pn junctions in the devices. A tunneling static random access memory is demonstrated with a supply voltage of 0.42 V, well below the minimum supply voltage that MOSFET technology is capable of delivering. The memory is produced using two Si/SiGe resonant tunneling diodes with peak voltages of 0.175 V fabricated on top of a silicon substrate.