Optical absorption enhancement in slanted silicon nanocone hole arrays for solar photovoltaics
Optical absorption enhancement in slanted silicon nanocone hole arrays for solar photovoltaics
复制标题
用于太阳能光伏发电的倾斜硅纳米锥孔阵列的光吸收增强
DOI:
10.1088/1674-1056/25/10/106802
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发表时间:
2016
影响因子:
1.7
通讯作者:
Yang Fu-Hua
中科院分区:
文献类型:
--
作者:
Zhang Shu-Yuan;Liu Wen;Li Zhao-Feng;Liu Min;Liu Yu-Sheng;Wang Xiao-Dong;Yang Fu-Hua
We investigate slanted silicon nanocone hole arrays as light absorbing structures for solar photovoltaics via simulation. With only 1-μm equivalent thickness, a maximum short-circuit current density of 34.9 mA/cm 2 is obtained. Moreover, by adding an Ag mirror under the whole structure, a short-circuit current density of 37.9 mA/cm 2 is attained. It is understood that the optical absorption enhancement mainly results from three aspects. First, the silicon nanocone holes provide a highly efficient antireflection effect. Second, after breaking the geometric symmetry, the slanted silicon nanocone hole supports more resonant absorption modes than vertical structures. Third, the Fabry–Perot resonance enhances the light absorption after adding an Ag mirror.